W. Rudno-Rudziński, M. Gawełczyk, P. Podemski, E. Cybula, S. Gorantla, R. Balasubramanian, V. Sichkovskyi, A.J. Willinger, G. Eisenstein, J.P. Reithmaier, G. Sęk Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates ACS Appl. Mater. Interfaces 16, 51150 (2024)
P. Wyborski, M. Gawełczyk, P. Podemski, P.A. Wroński, M. Pawlyta, S. Gorantla, F. Jabeen, S. Höfling, G. Sęk Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range Phys. Rev. Applied 20, 044009 (2023)
J. Serafińczuk, W. Rudno-Rudziński, M. Gawełczyk, P. Podemski, K. Parzyszek, A. Piejko, V. Sichkovskyi, J.P. Reithmaier, G. Sęk High-resolution X-ray diffraction to probe quantum dot asymmetry Measurement 221, 113451 (2023)
P. Wyborski, P. Podemski, P. Wroński, F. Jabeen, S. Höfling, G. Sęk Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer Materials 15, 1071 (2022)
P. Podemski, M. Gawełczyk, P. Wyborski, H. Salamon, M. Burakowski, A. Musiał, J.P. Reithmaier, M. Benyoucef, G. Sęk Spin memory effect in charged single telecom quantum dots Opt. Express 29, 34024 (2021)
P. Wroński, P. Wyborski, A. Musiał, P. Podemski, G. Sęk, S. Höfling, F. Jabeen Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate Materials 14, 5221 (2021)
P. Wyborski, A. Musiał, P. Mrowiński, P. Podemski, V. Baumann, P. Wroński, F. Jabeen, S. Höfling, G. Sęk InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window Materials 14, 759 (2021)
P. Podemski, A. Musiał, K. Gawarecki, A. Maryński, P. Gontar, A. Bercha, W. Trzeciakowski, N. Srocka, T. Heuser, D. Quandt, A. Strittmatter, S. Rodt, S. Reitzenstein, G. Sęk Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm Appl. Phys. Lett. 116, 023102 (2020)
M. Gawełczyk, P. Wyborski, P. Podemski, J.P. Reithmaier, S. Höfling, G. Sęk Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band Phys. Rev. B 100, 241304(R) (2019)
P. Podemski, A. Maryński, P. Wyborski, A. Bercha, W. Trzeciakowski, G. Sęk Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range J. Lumin. 212, 300 (2019)
A.Maryński, P.Mrowiński, K.Ryczko, P.Podemski, K.Gawarecki, A.Musiał, J.Misiewicz, D.Quandt, A.Strittmatter, S.Rodt, S.Reitzenstein, G.Sęk Optimizing the InGaAs/GaAs Quantum Dots for 1.3 µm Emission Acta Phys. Pol. A 132, 386 (2017)
P. Podemski, M. Pieczarka, A. Maryński, J. Misiewicz, A. Löffler, S. Höfling, J.P. Reithmaier, S. Reitzenstein, G. Sęk Probing the carrier transfer processes in a self-assembled system with In0.3Ga0.7As/GaAs quantum dots by photoluminescence excitation spectroscopy Superlatt. Microstruct. 93, 214 (2016)
M. Pieczarka, A. Maryński, P. Podemski, J. Misiewicz, P. D. Spencer, R. Murray, G. Sęk Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure Acta Phys. Pol. A 129, A-59 (2016)
M. Holmes, S. Kako, K. Choi, P. Podemski, M. Arita, Y. Arakawa Probing the Excitonic States of Site-Controlled GaN Nanowire Quantum Dots Nano Lett. 15, 1047 (2015)
M. Pieczarka, P. Podemski, A. Musiał, K. Ryczko, G. Sęk, J. Misiewicz, F. Langer, S. Höfling, M. Kamp, A. Forchel GaAs-Based Quantum Well Exciton-Polaritons beyond 1 µm Acta Phys. Pol. A 124, 817 (2013)
M. Pieczarka, A. Musiał, P. Podemski, G. Sęk, J. Misiewicz Electronic Structure of Elongated In0.3Ga0.7As/GaAs Quantum Dots Acta Phys. Pol. A 124, 809 (2013)
M. Holmes, S. Kako, K. Choi, P. Podemski, M. Arita, Y. Arakawa Measurement of an Exciton Rabi Rotation in a Single GaN/AlxGa1-xN Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control Phys. Rev. Lett. 111, 057401 (2013)
M. Holmes, S. Kako, K. Choi, P. Podemski, M. Arita, Y. Arakawa Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires Jpn. J. Appl. Phys. 52, 08JL02 (2013)
P. Podemski, M. Holmes, S. Kako, M. Arita, Y. Arakawa Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots Appl. Phys. Express 6, 012102 (2013)
A. Musiał, P. Podemski, G. Sęk, P. Kaczmarkiewicz, J. Andrzejewski, P. Machnikowski, J. Misiewicz, S. Hein, A. Somers, S. Höfling, J.P. Reithmaier, A. Forchel Height-driven linear polarization of the surface emission from quantum dashes Semicond. Sci. Technol. 27, 105022 (2012)
G. Sęk, R. Kudrawiec, P. Podemski, J. Misiewicz, A. Somers, S. Höfling, J.P. Reithmaier, M. Kamp, A. Forchel On the mechanisms of energy transfer between quantum well and quantum dashes J. Appl. Phys. 112, 033520 (2012)
Ł. Dusanowski, G. Sęk, A. Musiał, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, A. Forchel Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots J. Appl. Phys. 111, 063522 (2012)
A. Musiał, P. Kaczmarkiewicz, G. Sęk, P. Podemski, P. Machnikowski, J. Misiewicz, S. Hein, S. Höfling, A. Forchel Carrier trapping and luminescence polarization in quantum dashes Phys. Rev. B 85, 035314 (2012)
M. Syperek, A. Musiał, G. Sęk, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, A. Forchel Impact of the localized wetting layer states on carrier relaxation processes in GaAs‐based quantum dash structures AIP Conf. Proc. 1399, 563 (2011)
A. Musiał, G. Sęk, A. Maryński, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, J.P. Reithmaier, A. Forchel Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio Acta Phys. Pol. A 120, 883 (2011)
P. Kaczmarkiewicz, A. Musiał, G. Sęk, P. Podemski, P. Machnikowski, J. Misiewicz Hole Subband Mixing and Polarization of Luminescence from Quantum Dashes: A Simple Model Acta Phys. Pol. A 119, 633 (2011)
A. Musiał, G. Sęk, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, A. Forchel Excitonic complexes in InGaAs/GaAs quantum dash structures J. Phys.: Conf. Ser. 245, 012054 (2010)
G. Sęk, A. Musiał, P. Podemski, J. Misiewicz On the applicability of a few level rate equation model to the determination of exciton versus biexciton kinetics in quasi-zero-dimensional structures J. Appl. Phys. 108, 033507 (2010)
G. Sęk, A. Musiał, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, A. Forchel Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes J. Appl. Phys. 107, 096106 (2010)
S. Hein, P. Podemski, G. Sęk, J. Misiewicz, P. Ridha, A. Fiore, G. Patriarche, S. Höfling, A. Forchel Orientation dependent emission properties of columnar quantum dash laser structures Appl. Phys. Lett. 94, 241113 (2009)
G. Sęk, P. Podemski, J. Andrzejewski, J. Misiewicz, S. Hein, S. Höfling, A. Forchel Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 µm Appl. Phys. Express 2, 061102 (2009)
R. Kudrawiec, P. Podemski, M. Motyka, J. Misiewicz, J. Serafińczuk, A. Somers, J.P. Reithmaier, A. Forchel Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells Superlatt. Microstruct. 46, 425 (2009)
G. Sęk, P. Podemski, A. Musiał, J. Misiewicz, S. Hein, S. Höfling, A. Forchel Exciton and biexciton emission from a single InAs/InP quantum dash J. Appl. Phys. 105, 086104 (2009)
G. Sęk, P. Podemski, J. Misiewicz, S. Reitzenstein, J.P. Reithmaier, A. Forchel Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots J. Appl. Phys. 105, 053513 (2009)
P. Podemski, G. Sęk, K. Ryczko, J. Misiewicz, S. Hein, S. Höfling, A. Forchel, G. Patriarche Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 µm Appl. Phys. Lett. 93, 171910 (2008)
G. Sęk, P. Podemski, J. Misiewicz, L. H. Li, A. Fiore, G. Patriarche Photoluminescence from a single InGaAs epitaxial quantum rod Appl. Phys. Lett. 92, 021901 (2008)
G. Sęk, P. Podemski, W. Rudno-Rudziński, Z. Gumienny, J. Misiewicz Microphotoreflectance spectroscopy – a modulation technique with high spatial resolution Opt. Appl. 37, 439 (2007)
G. Sęk, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, A. Forchel Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 µm emission Appl. Phys. Lett. 90, 081915 (2007)
G. Sęk, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, J.P. Reithmaier, A. Forchel Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures Proc. SPIE 6481, 64810F (2007)
G. Sęk, R. Kudrawiec, M. Motyka, P. Poloczek, W. Rudno-Rudziński, P. Podemski, J. Misiewicz Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures Phys. Stat. Sol. (a) 204, 400 (2007)
P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J.P. Reithmaier, A. Forchel Thermal quenching of photoluminescence from InAs/In0.53Ga0.23Al0.24As/InP quantum dashes with different sizes Appl. Phys. Lett. 89, 151902 (2006)
P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, J.P. Reithmaier, A. Forchel On the tunnel injection of excitons and free carriers from In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well to InAs/In0.53Ga0.23Al0.24As quantum dashes Appl. Phys. Lett. 89, 061902 (2006)
W. Rudno-Rudziński, R. Kudrawiec, P. Podemski, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J.P. Reithmaier, A. Forchel Photoreflectance-probed excited states in InAs/InGaAlAs quantum dashes grown on InP substrate Appl. Phys. Lett. 89, 031908 (2006)